PART |
Description |
Maker |
DS1250Y-70 |
4096k Nonvolatile SRAM 512K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA32
|
Maxim Integrated Products, Inc.
|
DS1330Y-100 DS1345ABP-70-IND DS1345AB-70 DS1345AB- |
1024k Nonvolatile SRAM with Battery Monitor 128K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34 GT 6C 2#8 4#16 SKT PLUG CAT5E PATCH CORD 100 FOOT BEIGE 4096k Nonvolatile SRAM with Battery Monitor
|
Maxim Integrated Products, Inc. DALLAS[Dallas Semiconductor] DALLAS[Dallas Semiconducotr] MAXIM - Dallas Semiconductor
|
DS1250YL-70-IND |
4096k Nonvolatile SRAM
|
MAXIM - Dallas Semiconductor
|
DS1350AB DS1350Y |
4096k Nonvolatile SRAM with Battery Monitor
|
MAXIM - Dallas Semiconductor
|
DS1350WP-100 DS1350WP-100IND |
3.3V 4096K Nonvolatile SRAM with Battery Monitor
|
MAXIM - Dallas Semiconductor
|
AS7C4096A-12TCN AS7C4096A-15JI |
IC,AS7C4096A-12TCN,TSOP-44 II, SRAM,12NS,512K X 8,5V 512K X 8 STANDARD SRAM, 12 ns, PDSO44 512K X 8 STANDARD SRAM, 15 ns, PDSO36
|
Alliance Memory, Inc. ALLIANCE MEMORY INC
|
DS1265Y DS1265AB |
8M Nonvolatile SRAM(8M非易失性静态RAM) 8M非易失SRAM 8M Nonvolatile SRAM(8M非易失性静态RAM) 1M X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDIP36
|
Maxim Integrated Products, Inc.
|
M68AF511A M68AF511AL55MC1T M68AF511AL55MC6T M68AF5 |
4 Mbit (512K x8) / 5V Asynchronous SRAM 4 Mbit (512K x8), 5V Asynchronous SRAM(512K X 8 SRAM 5V SOP32 ,I-Temp) 4 Mbit (512K x8), 5V Asynchronous SRAM 4兆位(为512k × 8),5V的异步SRAM
|
STMICROELECTRONICS[STMicroelectronics] ST Microelectronics 意法半导 STMicroelectronics N.V.
|
GS88018BT-133 GS88018BT-133I GS88018BT-150 GS88018 |
133MHz 8.5ns 512K x 18 9Mb sync burst SRAM 150MHz 7.5ns 512K x 18 9Mb sync burst SRAM 166MHz 7ns 512K x 18 9Mb sync burst SRAM 200MHz 6.5ns 512K x 18 9Mb sync burst SRAM 225MHz 6ns 512K x 18 9Mb sync burst SRAM 250MHz 5.5ns 512K x 18 9Mb sync burst SRAM
|
GSI Technology
|
WPS512K8VB-15RJI WPS512K8VB-15RJM WPS512K8VB-17RJI |
3.3V 512K x 8 SRAM, 15ns 3.3V 512K x 8 SRAM, 17ns 3.3V 512K x 8 SRAM, 20ns
|
White Electronic Designs
|
AS5SP512K18DQ AS5SP512K18DQ-30ET AS5SP512K18DQ-30I |
512K X 18 CACHE SRAM, 4 ns, PQFP100 Plastic Encapsulated Microcircuit 9Mb, 512K x 18, Synchronous SRAM Pipeline Burst, Single Cycle Deselect
|
MICROSS COMPONENTS Austin Semiconductor
|
CY7C1371D-100AXI CY7C1371D-100BGI CY7C1373D-100BZI |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PQFP100 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 18兆位(为512k × 36/1M × 18)流体系结构,通过与NoBLTM的SRAM 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PQFP100 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA119
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|